Photo & e-beam resist

3. H-SiQ - Negative E-beam Resist
  •  
    H-SiQ is characterized by excellent pitch resolution, sensitivity and etch resistance for direct write thin film EBL applications.
     
    DisChem H-SiQ is a negative tone hydrogen silesquioxane resist derived from dry silica resin (H-SiOx) in MIBK carrier solvent for use in electron beam lithography (EBL).
     
    Thickness: 25 nm - 800 nm
     
    20ml, 50ml, 100ml 등 이외 용량 선택 가능
H-SiQ - Negative E-beam Resist ▼
H-SiQ Description
Application Guidelines
- H-SiQ is a negative tone hydrogen silesquioxane resist derived
  from dry silica resin (H-SiOx) in MIBK carrier solvent for use in
  electron beam lithography (EBL).
- H-SiQ is characterized by excellent pitch resolution, sensitivity
  and etch resistance for direct write thin film EBL applications.
- H-SiQ is prepared on a percent by weight basis of silica resin in
  semiconductor grade MIBK with concentrations ranging from
  1 – 20% / wt. Prepared solutions are available in  quantities
  of 20 – 100 ml.
- Bring H-SiQ to room temperature before opening bottle.
- H-SiQ is applied by spin coating at 1000—6000 rpm.
- H-SiQ is provided prefiltered to 0.22 um (<10%) and 0.45 um
 (>10%). Additional filtration is typically not required.
 If additional filtration is needed, please see the data sheet.
- Bake after spin coating at 120°C for 2 minutes for high
 contrast and sensitivity at low exposure dose.
- H-SiQ is developed after EBL using your preferred HSQ
 developer (TMAH or NaOH/NaCl).
- Etch resistance of the cured H-SiQ film is comparable to
 traditional HSQ: 30 sccm CF4, 30 mTorr, 100 W, 33 nm/min.

Thin Film Spin Curve
Thic Film Spin Curve
Spin_curves.jpg
DC_sheet_resistance.jpg

 
H-SiQ 6% Results
H-SiQ_Result_1
H-SiQ_Result_2
H-SiQ_Result_3
H-SiQ_Result_4
H-SiQ_Result_5
H-SiQ_Result_6
Products Guide ▼
Tone
Product (link)
Film Thickness (nm)
Feature
Adhesion PromoterSurPass seriesNAApply resist: Novolac, DNQ, PMMA, HSQ, PMGI, SU-8, SML, PI, ...
Negative ebeam resistHSQ series8 – 1,650Dilution: 1 - 45%.
Supply: Powder, Solution.
H-SiQ series25 – 850Dilution: 2 - 20%.
Supply: Powder, Solution.
AR-N 7520 New series100 – 800Best resolution: 28 nm.
e-beam, DUV, i-line.
Positive ebeam resistHARP PMMA series50  – 3,700m/W: 950K, 495K.
Dilution: 2 - 11 %.
HARP-C Copolymer series150  – 1,100MMA/MAA Copolyer.
  Dilution: 6 - 12 %.
PMMA series40  – 7,000m/W: 950K, 495K, 350K, 120K, 35K.
  Dilution: 1 - 18 %.
Copolymer series100  – 1,100Copolymer.
  Dilution: 1 - 13 %.
SML series50  – 4,800High resolution: 5 nm. Aspect ratio: >50:1.
  Slow etch rate.
Conductive layerDisCharge H2O series25 – 170Apply resist: PMMA, HSQ, mr-PosEBR, AR-P 6200, ZEP, SML.
Protective Surface CoatingPSC-10032.4 – 5.3Protective Surface Coating
PSC-IB DPM 101010 (@ 2000 RPM)Protective Surface Coating
* Double coating.