Photo & e-beam resist

6. AR-N 7520 New - Negative E-beam Resist
  •  
    Negative e-beam resist with highest resolution
     
    Highest resolution and highly sensitive for the production of integrated circuits
     
    Thickness: 90 nm - 800 nm
     
    Mix & match processes between e-beam and UV exposure 248-365 nm, negative in the UV range
     
    250ml, 1L 용량 선택 가능
AR-N 7520 New - Negative E-beam Resist ▼
Characterisation
Properties
  - E-beam, deep UV, i-line (formerly SX AR-N 7520/4).
  - Short writing times, very high contrast.
  - Mix & match processes between e-beam and UV exposure
    248-365 nm, negative in the UV range.
  - Highest resolution, very process-stable (no CAR).
  - Plasma etching resistant, temp.-stable up to 140 °C.
  - novolac, organic crosslinking agent.
  - safer solvent PGMEA.
 Parameter /AR-N 7520 New.17.11.07
 Thickness (μm) /4000 rpm0.40.20.1
 Resolution best value (nm)28
 Plasma etching rates (nm/min)
 (5 Pa, 240-250 V Bias)		Ar-sputtering8
O2169
CF441
80 CF4 + 16 O290

Spin Curve
Process chemicals
Negative e-beam resist spin curve
   
Adhesion promotorAR 300-80
DeveloperAR 300-47, AR 300-46
ThinnerAR 300-12
RemoverAR 600-71, 300-73

Process results
Negative e-beam resist resolution
AR-N 7520.07 new 30-nm lines at a film thickness of 90 nm
Negative e-beam resist structures
AR-N 7520.17 new 400 and 600 nm lines, thickness 400 nm
Products Guide ▼
Tone
Product (link)
Film Thickness (nm)
Feature
Adhesion PromoterSurPass seriesNAApply resist: Novolac, DNQ, PMMA, HSQ, PMGI, SU-8, SML, PI, ...
Negative ebeam resistHSQ series8 – 1,650Dilution: 1 - 45%.
Supply: Powder, Solution.
H-SiQ series25 – 850Dilution: 2 - 20%.
Supply: Powder, Solution.
AR-N 7520 New series100 – 800Best resolution: 28 nm.
e-beam, DUV, i-line.
Positive ebeam resistHARP PMMA series50  – 3,700m/W: 950K, 495K.
Dilution: 2 - 11 %.
HARP-C Copolymer series150  – 1,100MMA/MAA Copolyer.
  Dilution: 6 - 12 %.
PMMA series40  – 7,000m/W: 950K, 495K, 350K, 120K, 35K.
  Dilution: 1 - 18 %.
Copolymer series100  – 1,100Copolymer.
  Dilution: 1 - 13 %.
SML series50  – 4,800High resolution: 5 nm. Aspect ratio: >50:1.
  Slow etch rate.
Conductive layerDisCharge H2O series25 – 170Apply resist: PMMA, HSQ, mr-PosEBR, AR-P 6200, ZEP, SML.
Protective Surface CoatingPSC-10032.4 – 5.3Protective Surface Coating
PSC-IB DPM 101010 (@ 2000 RPM)Protective Surface Coating
* Double coating.