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Advantages in Lithographic Processing |
Compatibility |
- Improved microlithographic resist, resist, polymer, and HSQ
adhesion on a broad range of substrate materials.
- Improved patterned resist mould to copper seed layer for
subsequent electroforming operation.
- Increased adhesion of evaporated metals to substrate materials.
- Improved removal of critical substrate contaminants.
- Improved adhesion may allow for reduction of EBL exposure
energy for minimizing BSE emission reducing exposure time.
- Reduced z-potential for improved coating properties.
- May eliminate the need for thermally matched glass.
- Eliminates need for substrate dehydration bake prior to
processing.
- Non-Hazardous waterborne formulation.
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- Substrate compatibility.
SurPass has demonstrates excellent adhesion properties on a
wide range of substrate materials, including glass, silicon nitride,
metals, metal oxides, ceramics (ruby, sapphire) and plastics
(PET).
- Resist and Polymer Compatibility.
SurPass has shown compatibility with most positive and negative
resistand polymer formulations, providing excellent adhesion
when used in conjunction phenolic resin Novolakresist
(DNQ/Novolac/ma-N2400/Shipley1800), poly
methylmethacrylate (PMMA), poly methylglutarimide (PMGI),
epoxy based polymer (SU8), polyimide, electron beam resist
(includingHSQ), chemically and non-chemically amplified
photoresist.
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Spray / Dispense / Spin Coat Application |
Selection of Appropriate SurPass Primer |
| Process step |
SurPass 3000 |
SurPass 4000 |
| Spin coat |
3000 rpm / 30 seconds |
| Bake |
No dehydration bake is needed |
| Rinse |
Water (SU-8 IPA) |
Water or IPA |
| Dry |
Spin dry or N2 blow |
| Apply Resist |
Epoxy resist (SU-8),
HSQ, Polymer, PR |
Novolac Based Resist | |
- SurPass 3000 is recommended for use with epoxy resists (SU-8)
and HSQ e-beam resist.
- SurPass 4000 is ideal for promoting adhesion of novolac resists
(ma-N 1400, ma-N 2400, Shipley 1800, etc.).
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Positive Tone DNQ / Novolac Resist (ma-P1200 series) |
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ma-P 1200, Film thickness = 7.5 μm, development in 0.22 to 0.26N TMAH |
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Control,
Silicon Substrate
Bad adhesion of
small patterns |
Si +
SurPass 4000
Excellent adhesion
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SiO2 +
SurPass 4000
Excellent adhesion
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Glass +
SurPass 4000
Excellent adhesion
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GaP +
SurPass 4000
Excellent adhesion
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Cu +
SurPass 4000
Excellent adhesion
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Negative Tone Aromatic Bisazide / Novolac Resist (ma-N 400, ma-N 1400 series) |
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ma-N 1400, Film thickness 1 μm, developed in ma-D533/S or 0.363 N TMAH |
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Control, Silicon Substrate
Bad adhesion |
Si + SurPass 4000
Excellent adhesion |
SiO2 + SurPass 4000
Excellent adhesion |
Glass + SurPass 4000
Excellent adhesion |
GaP + SurPass 4000
Excellent adhesion |
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ma-N 400, Film thickness = 7.5 μm, developed in ma-D 332S or 0.2N NaOH or 0.275N TMAH |
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Control, Silicon Substrate
Bad adhesion |
Si + SurPass 4000
Excellent adhesion |
SiO2 + SurPass 4000
Excellent adhesion |
Glass + SurPass 4000
Excellent adhesion |
GaP + SurPass 4000
Excellent adhesion |
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Nickel Electroplate on Positive Tone DNQ / Novolac Resist (ma-P1200 series) |
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Nickel electroplate of ma-P 1200 resist mould on copper seed layer on Si carrier substrate |
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ma-P 1200 resist mold, 7.5 μm thick.
Ni electroplated to 5 μm thickness on Cu seed layer |
ma-P 1200 resist mold, 30 μm thick.
Ni electroplated to 25 μm thickness on Cu seed layer |
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Epoxy Resist (SU-8) |
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Control, Silicon Substrate
Poor adhesion of large patterns |
Si+ SurPass 3000 treatment
Excellent Adhesion |
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Epoxy Resist (SU-8) |
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SU-8 epoxy resist on Si substrate treated with SurPass 3000 |
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SU-8 epoxy resist on SiO2 substrate treated with SurPass 3000 |
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SU-8 epoxy resist on Glass substrate treated with SurPass 3000 |
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SU-8 epoxy resist on TiOx substrate treated with SurPass 3000 |
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SU-8 epoxy resist on Cr/Au on Si substrate treated with SurPass 3000 |
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Improved Adhesion of HSQ Electron Beam Resist |
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SurPass greatly improves electron beam resist adhesion on III, IV, V metal oxide substrates,
allowing for reduced exposure energy and improved process latitude for small and large lithographic features. |
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Fig 1: EBL exposure of HSQ resist on multilayer InGaAs
No Treatment
prior to application of resist |
Fig 2: EBL exposure of HSQ resist on multilayer InGaAs
Treated with SurPass 3000
prior to application of HSQ resist |
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Fig 3: InGaAs multilayer system treated with SurPass
3000 prior to application HSQ resist. Exposure dose
reduced by factor of four. |
Fig 4 : 30nm lithographic structures on InGaAs multilayer
system treated with SurPass 3000 prior to application of
HSQ. Exposure dose reduced by factor of four. |
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